Epitaxial growth and layer | 私立大學五星教授網

由 H Kum 著作 · 2019 · 被引用 188 次 — The process can be homogeneous (growth on a substrate of the same material) or heterogeneous (growth on a substrate of a dissimilar material).

Epitaxy is a unique growth mode in which the crystalline structure of the growing film matches the substrate atom for atom as the layers are deposited. If there ...

由 T Fujii 著作 · 2021 · 被引用 14 次 — The major challenges are that heterogeneous integration of III-V materials on Si induces the formation of dislocation at high process temperature; thus, the ...

由 FR Fan 著作 · 2008 · 被引用 801 次 — The growth of heterogeneous metal shells on the gold core presents two different forms, the conformal epitaxial growth for Au@Pd and Au@Ag ...

由 Y Luo 著作 · 2020 · 被引用 7 次 — Our work shows that new manganite can be directly formed on manganite surface through heterogenous oxidation at near natural pH and accelerates ...

由 V Nanda 著作 · 2016 — In epitaxial growth, long-range crystalline order is induced in a deposited material through interactions with an existing crystalline surface.

由 FR Fan 著作 · 2009 · 被引用 189 次 — Facet-Selective Epitaxial Growth of Heterogeneous Nanostructures of Semiconductor and Metal: ZnO Nanorods on Ag Nanocrystals · Figure 1. Figure 1 ...

由 M Park 著作 · 2022 · 被引用 7 次 — Since epitaxial growth generally necessitates a high growth temperature,6 this ex situ heterogeneous integration is free from thermal budget ...