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In electronics, short-channel effects occur in MOSFETs in which the channel length is comparable to the depletion layer widths of the source and drain junctions. These effects include, in particular, drain-induced barrier lowering, velocity saturation, qu

短通道效應（英語：short-channel effects）是當金屬氧化物半導體場效應管的導電溝道長度降低到十幾納米、甚至幾納米量級時，電晶體出現的一些效應。

Short-channel effects occur when the channel length is the same order of magnitude as the depletion-layer widths of the source and drain junction.

2021年2月7日 — Short Channel effects：短沟道效应. 在CMOS器件工艺中，当导电沟道长度降低到十几纳米，甚至几纳米量级时，晶体管出现一些效应。这些效应主要包括阈值电压Vth ...

In electronics, short-channel effects occur in MOSFETs in which the channel length is comparable to the depletion layer widths of the source and drain junctions. These effects include, in particular, drain-induced barrier lowering, velocity saturation, qu

2018年9月18日 — This document discusses short channel effects that occur in MOSFET devices when the channel length decreases to the same order of magnitude ...

In a short-channel device, the drain junction is now quite close to the source junction. As a consequence, the potential at the source-channel region is ...

由 FÁ Herrera 著作 · 2020 · 被引用 9 次 — This paper presents compact modeling for the short-channel effect on the multi-gate MOSFET technology. The focus is given on the double-gate MOSFET.

由 A Chaudhry 著作 · 2010 · 被引用 544 次 — Short-channel effects (SCE) can be chiefly attributed to the so-called drain- induced barrier lowering (DIBL) effect which causes a reduction in the threshold ...

In electronics, short-channel effects occur in MOSFETs in which the channel length is comparable to the depletion layer widths of the source and drain junctions. These effects include, in particular, drain-induced barrier lowering, velocity saturation, qu