In electronics, short-channel effects occur in MOSFETs in which the channel length is comparable to the depletion layer widths of the source and drain junctions. These effects include, in particular, drain-induced barrier lowering, velocity saturation, qu
In electronics, short-channel effects occur in MOSFETs in which the channel length is comparable to the depletion layer widths of the source and drain junctions. These effects include, in particular, drain-induced barrier lowering, velocity saturation, qu
In electronics, short-channel effects occur in MOSFETs in which the channel length is comparable to the depletion layer widths of the source and drain junctions. These effects include, in particular, drain-induced barrier lowering, velocity saturation, qu
2018年9月18日 — This document discusses short channel effects that occur in MOSFET devices when the channel length decreases to the same order of magnitude ...
In a short-channel device, the drain junction is now quite close to the source junction. As a consequence, the potential at the source-channel region is ...
由 FÁ Herrera 著作 · 2020 · 被引用 9 次 — This paper presents compact modeling for the short-channel effect on the multi-gate MOSFET technology. The focus is given on the double-gate MOSFET.
由 A Chaudhry 著作 · 2010 · 被引用 544 次 — Short-channel effects (SCE) can be chiefly attributed to the so-called drain- induced barrier lowering (DIBL) effect which causes a reduction in the threshold ...
In electronics, short-channel effects occur in MOSFETs in which the channel length is comparable to the depletion layer widths of the source and drain junctions. These effects include, in particular, drain-induced barrier lowering, velocity saturation, qu
